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Product Detailed Parameters
- Description：IGBT 600V 75A TO-264AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 40A
- Power - Max：280 W
- Switching Energy：1.8mJ (off)
- Input Type：Standard
- Gate Charge：190 nC
- Td (on/off) @ 25°C：50ns/110ns
- Test Condition：480V, 40A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：35 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264AA (IXSK)
- Grade：-
- Qualification：-
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Overview
The IXSK40N60BD1 is a single Insulated Gate Bipolar Transistor (IGBT) with an integrated antiparallel Fast Recovery Epitaxial Diode (FRED). It utilizes the HDMOSTM process to achieve low saturation voltage and soft diode recovery. The device is housed in a PLUS247TM package, supporting through-hole mounting via clip or spring mechanisms. Key electrical ratings include a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C.
Feature Summary
- Integrated IGBT and FRED in a single PLUS247TM package for space savings
- Guaranteed short-circuit Safe Operating Area (SOA) capability
- Low VCE(sat) for minimized on-state conduction losses
- Soft recovery characteristic with low reverse recovery current (IRM)
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity through authorized IXYS distributors or Littelfuse channels. Confirm package integrity and pin alignment prior to assembly. Ensure storage conditions comply with moisture sensitivity level requirements. Review latest datasheets for any manufacturing changes or obsolescence notices before finalizing procurement plans.
Selection Notes
Select this component for medium-frequency applications requiring high ruggedness and compact packaging. The integrated diode simplifies circuit design by eliminating external freewheeling components. Evaluate thermal management needs based on the PLUS247TM package's heat dissipation capabilities and the specific switching frequency of the target application.
Part Context
This device belongs to the IXYS IGBT discrete product line, leveraging advanced semiconductor processes for improved efficiency. It serves as a robust switching solution for power electronics, combining high voltage blocking capability with fast switching speeds. The integration of the anti-parallel diode enhances system reliability and reduces overall bill of materials.
Replacement Considerations
Direct substitutes may include other IXYS IGBTs with similar voltage and current ratings in compatible packages. Cross-manufacturer replacements require verification of pinout compatibility, thermal characteristics, and electrical parameters such as VCE(sat) and switching times.
