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Product Detailed Parameters
- Description：IGBT MOD 1200V 70A 300W SOT227B
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 35A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：300 W
- Current - Collector Cutoff (Max)：750 µA
- Input Capacitance (Cies) @ Vce：3.9 nF @ 25 V
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Overview
The IXSN35N120AU1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single N-channel configuration housed in a TO-247AD-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25°C. Key electrical parameters include a saturation voltage of 2.6 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 300 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High voltage capability suitable for demanding power switching applications
- Integrated anti-parallel diode for efficient commutation
- Robust thermal management via TO-247AD-3 package
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific datasheet version when sourcing, as manufacturing transitions may affect documentation. Confirm the package type matches the target PCB footprint. Ensure the supplier provides original manufacturer packaging to prevent counterfeit components. Cross-reference the part number with official IXYS catalogs for current availability status.
Selection Notes
Select this component for circuits requiring 1200 V blocking voltage and moderate current handling up to 35 A. Consider the 2.6 V saturation voltage for conduction loss calculations. Evaluate the thermal resistance specifications against the intended heatsinking strategy. Verify that the gate drive requirements align with the specified voltage limits.
Part Context
This IGBT belongs to the IXYS high-voltage discrete transistor lineup, often utilized in industrial power conversion. It complements other IXYS devices like the IXSK35N120BD1 in similar voltage classes. The product line targets robust performance in motor drives and power supply topologies where reliability under high stress is critical.
Replacement Considerations
Direct substitutes include the IXSK35N120BD1 and IXSX35N120AU1 from the same manufacturer. These alternatives share similar voltage ratings and package styles. Verify pinout compatibility and thermal characteristics before swapping components in existing designs.
