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Product Detailed Parameters
- Description：IGBT MOD 1200V 110A 500W SOT227B
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 55A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：110 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：8 nF @ 25 V
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Overview
The IXSN55N120AU1 is a discrete Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single IGBT configuration housed in an SOT-227B package, designed for high-power switching applications. The device supports a maximum collector-emitter voltage of 1200V and a continuous collector current of 110A. With a power dissipation rating of 500W, it operates within a temperature range of -55°C to +150°C. This component utilizes advanced semiconductor technology to ensure reliable performance in demanding electrical environments.
Feature Summary
- Single IGBT configuration for robust power control
- High voltage capability with 1200V blocking
- SOT-227B package for efficient thermal management
- Wide operating temperature range for stability
Applications
- Power control systems requiring high voltage isolation
- Industrial motor drives and inverters
- Uninterruptible Power Supply (UPS) units
- High-frequency power conversion circuits
Procurement Notes
Verify the specific datasheet version and manufacturer documentation to confirm technical parameters before integration. Ensure that the SOT-227B package dimensions match the target PCB layout requirements. Cross-reference the electrical ratings with the system's operational limits to prevent overstress conditions during procurement and design phases.
Selection Notes
Select this component when a single-channel IGBT with 1200V blocking capability and 110A current handling is required. The SOT-227B package offers a balance between power density and thermal performance suitable for through-hole or board-mounted applications. Consider the 500W power dissipation limit and the wide temperature range when designing heat sinking solutions for the specific application environment.
Part Context
This part belongs to IXYS' discrete IGBT module lineup, specifically engineered for medium-to-high power applications. The SOT-227B form factor distinguishes it from smaller TO-247 devices, offering higher current capacity while maintaining compactness compared to larger industrial modules. It serves as a critical switching element in power electronics where reliability under high stress is paramount.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative IGBTs based on voltage, current, and package specifications using official manufacturer cross-reference tools.
