IXSP15N120B

IXSP15N120B

  • Description:IGBT 1200V 30A TO-220-3
  • Series:-

SKU:7a3df5a30229 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 30A TO-220-3
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:3.4V @ 15V, 15A
  • Power - Max:150 W
  • Switching Energy:1.75mJ (off)
  • Input Type:Standard
  • Gate Charge:57 nC
  • Td (on/off) @ 25°C:30ns/148ns
  • Test Condition:960V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXSP15N120B

Overview

The IXSP15N120B is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) from the S Series, manufactured by IXYS. It features an integrated anti-parallel diode and is housed in standard JEDEC TO-220AB or TO-263AA packages. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A. Key electrical parameters include a low saturation voltage and improved short-circuit safe operating area (SCSOA). It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Improved Short-Circuit Safe Operating Area (SCSOA) capability for enhanced ruggedness
  • Low switching losses combined with low saturation voltage for efficiency
  • MOS gate structure enabling simple drive circuitry requirements

Applications

  • AC motor speed control systems
  • DC servo and robot drives
  • Uninterruptible power supplies (UPS)
  • Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific package variant required, as the datasheet lists both TO-220AB and TO-263AA options. Confirm RoHS compliance status through official documentation before procurement. Ensure gate drive specifications align with the MOS gate requirements to maintain optimal switching performance and prevent damage during operation.

Selection Notes

Select this component for applications requiring high voltage blocking and robust short-circuit tolerance. The integrated diode simplifies circuit design for half-bridge configurations. Consider thermal management strategies suitable for the chosen package style to ensure reliable operation at maximum junction temperatures.

Part Context

This IGBT belongs to the S Series, which focuses on improving short-circuit ruggedness while maintaining low conduction and switching losses. It serves as a discrete power switch solution for medium-power industrial and consumer electronics applications where reliability under fault conditions is critical.

Replacement Considerations

Check for direct pin-compatible alternatives within the IXYS S Series lineup that offer similar voltage and current ratings. Verify that any substitute maintains the same package footprint and thermal characteristics to avoid PCB redesign.

IXSP15N120BIXSP15N120B

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