SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXSR40N60CD1 is a high-voltage N-channel Power MOSFET manufactured by IXYS, belonging to the CoolMOS family. It utilizes the ISOPLUS247 package, which features an electrically isolated base for enhanced safety and reduced electromagnetic interference. The device is designed as a second-generation CoolMOS with low on-resistance and high blocking capability. Key technical attributes include avalanche rating for unclamped inductive switching (UIS) and low thermal resistance achieved through reduced chip thickness. These characteristics support high power density and reliable operation in demanding power conversion environments.
Verify component authenticity against official IXYS documentation due to market availability fluctuations. Confirm that the specific suffix matches the required ISOPLUS247 variant. Ensure compatibility with existing PCB footprints and thermal management solutions before integration into final designs.
Select this component when electrical isolation between the drain and heatsink is mandatory. The ISOPLUS247 package eliminates the need for insulating washers, simplifying assembly. Consider its avalanche rating for applications prone to inductive load switching. Evaluate thermal requirements based on the low thermal resistance provided by the chip-on-DCB construction.
This part belongs to the IXYS CoolMOS series, specifically utilizing the ISOPLUS247 form factor. It represents a specialized evolution of standard TO-247 devices, integrating dielectric isolation directly into the package structure. This distinguishes it from conventional MOSFETs that require external insulation materials for mounting.
Direct substitutes are not explicitly confirmed in public datasheets. Standard TO-247 MOSFETs may fit mechanically but lack the critical electrical isolation feature. Verify pinout compatibility and thermal interface requirements if considering alternative manufacturers.