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Product Detailed Parameters
- Description：IGBT PT 1200V 30A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：30ns/148ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXST15N120BD1 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by IXYS. It belongs to the 'S' Series, characterized by epitaxial silicon drift technology for fast switching and low tail current. The device features a 1200V collector-emitter breakdown voltage and a continuous collector current of 15A at 25°C. Packaged in TO-247, it supports junction temperatures up to 150°C.
Feature Summary
- Epitaxial silicon drift region design enabling fast switching speeds and reduced tail current.
- Integrated ultra-fast recovery anti-parallel diode for improved circuit efficiency.
- MOS gate structure providing simple drive requirements and high input impedance.
- Enhanced short-circuit safe operating area (SCSOA) capability.
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- DC choppers
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm lot traceability and RoHS compliance status prior to procurement. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity damage during assembly.
Selection Notes
Select this IGBT for applications requiring high blocking voltage and moderate current handling. The integrated diode simplifies circuit topology compared to discrete solutions. Evaluate thermal management requirements based on the specified junction temperature limits and package thermal resistance characteristics.
Part Context
This component is part of IXYS's high-voltage IGBT portfolio, specifically designed for industrial power conversion. The 'S' Series designation indicates optimized switching performance through drift region engineering. It serves as a key switching element in medium-power inverters and converters.
Replacement Considerations
Direct substitutes include IXSH15N120B and IXGT15N120B. Verify pinout compatibility and electrical parameter alignment before substitution. Cross-reference datasheets for specific thermal and switching time differences.
