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The IXST30N60B is a Power Trench IGBT manufactured by IXYS, housed in a TO-268AA surface-mount package. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 30A at 25°C. The device exhibits a maximum saturated collector-emitter voltage of 2.1V at 15V gate drive and 15A collector current. Switching characteristics include a turn-on delay of 45ns and a turn-off delay of 95ns under standard test conditions (480V, 15A, 3.3Ω, 15V). The component supports junction temperatures up to 150°C and has a maximum power dissipation of 150W.
Verify the specific suffix designation on the component marking against the official datasheet to confirm pinout configuration and thermal pad specifications. Ensure that the ordering information matches the exact package variant required for the PCB footprint. Confirm compliance with current environmental directives such as RoHS and REACH through the manufacturer's latest documentation before finalizing procurement.
Select this component when a surface-mount IGBT with moderate current handling capabilities is required for compact designs. Compare the 2.1V saturation voltage and 30A continuous current rating against system load requirements. Evaluate the thermal resistance characteristics of the TO-268AA package to ensure adequate heat sinking solutions are available for the intended operating environment.
This part belongs to the IXYS IXBT/IXST series of Power Trench IGBTs, which are engineered for general-purpose power switching applications. The series is characterized by high reliability and robust avalanche ratings. The TO-268AA package provides a balance between thermal performance and space efficiency for surface-mount assembly processes.
Direct substitutes may include other IXYS models from the same Power Trench family with compatible voltage and current ratings. Cross-manufacturer replacements require verification of pin compatibility, thermal resistance values, and switching energy parameters to ensure circuit functionality remains unchanged.
The maximum Vce(sat) is 2.1V when measured at a gate-emitter voltage of 15V and a collector current of 15A.
Yes, the IXST30N60B is manufactured with lead-free plating and is compliant with RoHS standards.
The device incorporates a fast recovery freewheeling diode with soft recovery characteristics to minimize electromagnetic interference.