IXSX35N120BD1

Description：IGBT PT 1200V 70A PLUS247
Series：-

SKU:8628df865c60 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 70A PLUS247
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 35A
Power - Max：300 W
Switching Energy：5mJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：36ns/160ns
Test Condition：960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)：40 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：PLUS247™-3
Grade：-
Qualification：-

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IXSX35N120BD1

Overview

The IXSX35N120BD1 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features an integrated fast recovery diode and is housed in a TO-247AD package. The device supports a continuous collector current of 35 A at 25°C and withstands a collector-emitter voltage of 1200 V. Key electrical characteristics include a maximum saturation voltage of 2.6 V, a turn-off time of 190 ns, and a reverse recovery time of 180 ns. It operates within a junction temperature range of -40°C to 175°C.

Feature Summary

High Voltage IGBT with integrated Diode
Short Circuit SOA Capability
Low Switching Losses

Applications

AC motor speed control
DC servo and robot drives
DC chopper
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix BD1 against official IXYS documentation to confirm pinout and thermal interface specifications. Ensure the component matches the required voltage and current ratings for the target circuit design. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement.

Selection Notes

Select this component for applications requiring high blocking voltage and moderate current handling. Consider the thermal resistance and package type for heat dissipation requirements. Evaluate the switching speed and short-circuit capability against the system's fault protection limits. Compare performance metrics with alternative IGBTs from the same manufacturer family.

Part Context

This part belongs to the IXYS High Voltage IGBT series, designed for robust power switching applications. The series emphasizes reliability and efficiency in industrial and consumer electronics. IXYS, now part of Littelfuse, specializes in power semiconductors and discrete devices. The product line targets markets demanding high performance and durability.