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Product Detailed Parameters
- Description：IGBT 600V 75A PLUS247
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
- Power - Max：300 W
- Switching Energy：3.3mJ (off)
- Input Type：Standard
- Gate Charge：167 nC
- Td (on/off) @ 25°C：70ns/150ns
- Test Condition：480V, 50A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXSX50N60BU1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25 °C. The device utilizes the PLUS247-3 package, which supports through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V and a power dissipation rating of 300 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Utilizes IXYS XPT technology for optimized switching performance and low conduction losses.
- Features the PLUS247-3 package design for efficient thermal management and robust mechanical stability.
- Designed with a square Reverse Bias Safe Operating Area (RBSOA) for reliable operation in inductive load applications.
Applications
- Motor drive systems
- Switched-mode power supplies (SMPS)
- Induction heating equipment
Procurement Notes
Verify the specific suffix 'BU1' against the official IXYS datasheet to confirm pinout configuration and packaging details. Ensure that the requested quantity matches the manufacturer's standard tube packing specifications. Cross-reference the part number with the latest revision history to avoid obsolete or non-compliant variants during procurement.
Selection Notes
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 75 A. The 2.5 V saturation voltage offers a balance between conduction loss and switching speed. Consider the 300 W power dissipation limit and the thermal resistance characteristics of the PLUS247-3 package when designing the heatsinking solution for the target environment.
Part Context
This IGBT belongs to the IXYS family of high-voltage power semiconductors designed for industrial and consumer electronics. The PLUS247 package is a standardized form factor widely used in medium-power conversion circuits. The device represents a silicon-based solution leveraging advanced trench gate technology for improved efficiency compared to older planar designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official IXYS cross-reference guides or authorized distributor databases for compatible alternatives with matching voltage, current, and package specifications.
