IXTA06N120P

$4.33

Description：MOSFET N-CH 1200V 600MA TO263
Series：Polar
Mfr：Littelfuse Inc.
Package：Tube

SKU:85ee293d6d39 Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXTA06N120P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 1200V 600MA TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTA06N120P

Description：MOSFET N-CH 1200V 600MA TO263
Series：Polar
Mfr：Littelfuse Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：32Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：13.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AA
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IXTA06N120P

IXTA06N120P

Single FETs, MOSFETs Overview

The IXTA06N120P is an N-Channel Enhancement Mode Power MOSFET with a 1200V drain-source voltage rating and a maximum continuous drain current of 0.6A at 25°C case temperature. It features a maximum on-state resistance of 32Ω at VGS=10V and ID=0.3A, and supports a peak pulsed drain current of 1.2A. The device is rated for unclamped inductive switching (UIS) energy up to 50mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Unclamped Inductive Switching (UIS) rated capability
Low package inductance design for easy drive and protection
High power density construction

Single FETs, MOSFETs Applications

Switched-mode and resonant-mode power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Littelfuse or IXYS documentation to confirm exact pinout and thermal characteristics. Confirm RoHS compliance status and lead-free soldering compatibility requirements prior to integration into manufacturing processes.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low continuous current handling. Evaluate the 32Ω RDS(on) limit against circuit efficiency needs. Ensure the driver can support the required gate charge levels for the intended switching frequency.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS Polar VHVTM series of high-voltage N-channel MOSFETs. It utilizes international standard packages including TO-263 and TO-220, designed for robust performance in demanding electronic control environments.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative high-voltage MOSFETs offering lower RDS(on) or higher current ratings if system requirements exceed 0.6A continuous operation.