IXTA182N055T

Description：MOSFET N-CH 55V 182A TO263
Series：TrenchMV™
Mfr：Littelfuse Inc.
Package：Tube

SKU:c0c4525f4ec0 Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXTA182N055T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 55V 182A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTA182N055T

Description：MOSFET N-CH 55V 182A TO263
Series：TrenchMV™
Mfr：Littelfuse Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：182A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4850 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AA
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IXTA182N055T

IXTA182N055T

Single FETs, MOSFETs Overview

The IXTA182N055T is a Gen1 Series N-Channel Trench Gate Power MOSFET manufactured by Littelfuse. It features a drain-to-source voltage rating of 55V and supports a continuous drain current of 182A at 25°C case temperature. The device utilizes silicon trench technology to achieve an exceptionally low on-resistance (RDS(ON)) of 0.005 ohms, ensuring minimal power dissipation in high-current applications. Packaged in a TO-263AA format, it operates within a junction temperature range of -40°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes N-Channel Trench Gate technology for low voltage and high current efficiency
Provides exceedingly low RDS(ON) to guarantee very low power loss
Supports a wide operating junction temperature range from -40°C to 175°C

Single FETs, MOSFETs Applications

Low voltage power conversion systems
High current DC-DC converter stages
Automotive electronic control units

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin, as historical records indicate IXYS production for this part number. Confirm RoHS compliance status directly with the supplier, as documentation may vary. Ensure the TO-263AA package matches your PCB footprint requirements. Check for any lifecycle status updates, such as obsolescence notices, before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance at 55V with currents exceeding 100A. The low thermal resistance inherent to the TO-263AA package facilitates effective heat dissipation. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the 0.005 ohm RDS(ON) against total system efficiency targets to minimize conduction losses.

Single FETs, MOSFETs Part Context

This device belongs to the Littelfuse Gen1 Series of N-Channel Trench Gate MOSFETs. This series is engineered specifically for applications demanding high current handling capabilities combined with low voltage operation. The trench gate architecture distinguishes these devices from planar technologies by offering superior switching characteristics and lower on-state resistance for equivalent die sizes.