IXTA1N170DHV

Single FETs, MOSFETs Overview

The Littelfuse IXTA1N170DHV is a high-voltage N-channel depletion mode power MOSFET designed for robust industrial applications. It features a TO-263HV surface-mount package and supports a drain-source breakdown voltage of 1700 V with a continuous drain current of 1 A at 25°C. The device exhibits a typical on-resistance of 16 milliohms and operates within a junction temperature range of -55°C to 150°C. As a depletion mode component, it remains conductive at zero gate bias, requiring negative voltage to turn off.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation ensures the device stays on at zero gate bias, eliminating the need for positive drive voltage for conduction.

Single FETs, MOSFETs Applications

• High-voltage power switching circuits
• Industrial motor control systems
• Power supply topologies requiring normally-on behavior

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (e.g., TRL) against the required packaging format, as standard and tape-and-reel variants may differ in shipping configuration. Confirm regional availability restrictions, as some sources indicate limited distribution outside specific markets. Ensure the procurement order matches the exact part number to avoid confusion with enhancement mode equivalents or different voltage ratings within the same series.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on high-voltage switch is required, distinguishing it from standard enhancement-mode MOSFETs that require positive gate drive. The 1700 V rating suits high-voltage DC link applications. Consider the TO-263HV package for surface-mount thermal management needs. Verify that the circuit design can accommodate the negative gate bias requirement necessary to turn off the depletion mode device safely.

Single FETs, MOSFETs Part Context

This part belongs to Littelfuse's D Series of high-voltage depletion mode MOSFETs. These devices are engineered for reliability in harsh environments, offering superior ruggedness compared to standard silicon carbide or gallium nitride alternatives in certain legacy designs. The series targets applications where fail-safe conduction at zero bias is critical for system safety.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 1700 V rating, 1 A current capacity, and depletion mode characteristic. Generic N-channel MOSFETs are not suitable substitutes due to the fundamental difference in gate threshold behavior. Consult Littelfuse documentation for qualified alternative part numbers within the IXTH or IXTA series that share identical pinouts and electrical specifications.