IXTH130N15T

Single FETs, MOSFETs Overview

The IXTH130N15T is a through-hole N-channel power MOSFET manufactured by IXYS. It features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 130 A at case temperature (Tc). The device has a maximum power dissipation of 400 W (Tc) and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate-source voltage (Vgs) of ±20 V, a typical on-resistance (Rds(on)) of 8.5 mΩ at 70 A and 10 V, and a maximum gate charge (Qg) of 87 nC at 10 V. It utilizes the TO-247 package.

Single FETs, MOSFETs Feature Summary

• Through-hole mounting configuration for robust mechanical attachment
• High current handling capability with 130 A continuous drain rating
• Low on-resistance design for efficient power switching
• Avalanche rated for rugged operation

Single FETs, MOSFETs Applications

• Motor control systems
• Power supply circuits
• Industrial switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets, as 'T' typically indicates tube packaging while 'X4' denotes tape and reel. Confirm that the requested part matches the exact electrical specifications and thermal characteristics required for your application. Ensure compatibility with existing PCB footprints and thermal management solutions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high current capacity and low conduction losses are critical in a through-hole design. Compare Rds(on) and thermal resistance values against alternative packages like TO-220 or TO-263 to ensure optimal performance for your specific thermal environment and current requirements.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS Power MOSFET family, specifically designed for general-purpose power switching applications. It shares similar electrical characteristics with other models in the series but differs in packaging style, offering through-hole mounting options suitable for prototyping or applications requiring mechanical stability.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include IXTH130N15X4 (tape and reel version) or IXFH130N15X3 (TO-247 variant). Verify pinout compatibility and thermal performance before substitution.