IXTH280N055T

Single FETs, MOSFETs Overview

The IXTH280N055T is a single N-channel Power MOSFET manufactured by IXYS, utilizing silicon technology in a TO-247-3 through-hole package. It features a drain-source breakdown voltage of 55 V and supports a continuous drain current of 280 A. The device exhibits a maximum on-resistance of 5.5 mΩ. Electrical characteristics include a gate threshold voltage of 2 V, gate charge of 180 nC, forward transconductance of 30 S, turn-on delay time of 29 ns, rise time of 44 ns, turn-off delay time of 72 ns, and fall time of 29 ns. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 520 W.

Single FETs, MOSFETs Feature Summary

• High-current capability with 280 A continuous drain current rating
• Low on-resistance for efficient power switching
• Robust thermal performance suitable for high-power applications

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer datasheet for the IXTH280N055T to confirm all electrical parameters and mechanical dimensions before integration. Ensure that the sourcing channel provides authentic components from authorized distributors to avoid counterfeit parts. Cross-reference the part number with official IXYS documentation to validate compatibility with existing circuit designs and thermal management requirements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling at low voltage levels. The low on-resistance minimizes conduction losses, improving overall system efficiency. Consider the thermal dissipation capabilities and ensure adequate heat sinking is implemented to maintain junction temperatures within the specified operating range during continuous operation.

Single FETs, MOSFETs Part Context

This component belongs to the IXYS Power MOSFET portfolio, specifically designed for high-efficiency power switching applications. It utilizes advanced trench technology to achieve superior performance metrics compared to standard planar devices. The TO-247-3 package provides reliable mounting options for industrial and commercial power electronics systems requiring robust semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

The IXTP240N055T is identified as an obsolete alternative. Verify electrical compatibility and pinout alignment before substitution. Consult official IXYS documentation for updated replacement recommendations or direct equivalents with matching specifications.