IXTH6N90A

Single FETs, MOSFETs Overview

The IXTH6N90A is an N-channel power MOSFET manufactured by IXYS. It features a maximum drain-source voltage (Vds) of 900 V and a continuous drain current (Id) of 6 A at 25°C. The device utilizes TO-247 surface-mount packaging for through-hole installation. Key electrical parameters include a gate-source voltage rating of ±20 V, a maximum power dissipation of 56 W, and an operating temperature range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 900 V breakdown voltage
• Enhancement-mode N-channel construction
• Through-hole TO-247 package design

Single FETs, MOSFETs Applications

• High-voltage switching circuits
• Power supply designs
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the TO-247 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 56 W power dissipation limit under your intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET is required in a through-hole configuration. The 900 V rating suits applications exceeding standard low-voltage limits. Consider the 6 A current capacity and thermal resistance characteristics relative to your heat sinking capabilities. Compare against other IXYS HiPerFET series devices if lower on-resistance or higher current density is needed.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS discrete power transistor portfolio, specifically within the MOSFET category. It is designed for general-purpose high-voltage switching applications. The TO-247 package provides robust mechanical stability and thermal performance suitable for industrial environments. It complements IXYS's broader range of semiconductor solutions for power electronics.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the IXYS IXTH series or comparable high-voltage MOSFETs from other manufacturers. Verify that substitute parts meet or exceed the 900 V Vds and 6 A Id specifications. Ensure the replacement maintains similar gate charge and switching characteristics to preserve circuit timing.