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IXTP20N65X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 650V 20A TO220AB. Review the specifications below when checking this part for your BOM.
The Littelfuse IXTP20N65X2 is an N-Channel Ultra Junction MOSFET belonging to the X2-Class series. It features a drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D25) of 20A at 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 185mΩ. Packaged in a TO-220-3 case for through-hole mounting, it operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and electrical tolerances. Confirm that the TO-220-3 package variant matches your thermal management requirements. Cross-reference the part number with official Littelfuse documentation to avoid confusion with similar X2-Class devices or alternative manufacturers.
Select this component when a 650V rating is required alongside moderate current handling capabilities. The X2-Class technology offers improved efficiency compared to standard MOSFETs due to reduced conduction and switching losses. Ensure the application environment supports the specified operating temperature range and consider the thermal resistance of the TO-220-3 package for adequate heat dissipation.
This device is part of Littelfuse's X2-Class series, which employs advanced charge compensation techniques. The series aims to provide lower R_DS(on) and gate charge than conventional counterparts. The IXTP20N65X2 specifically targets applications requiring robust performance in a standard through-hole package, balancing electrical efficiency with mechanical ease of integration.
Direct substitutes include other X2-Class variants such as IXTA24N65X2 or IXTH20N65X2, provided pinouts and thermal characteristics are compatible. Verify that any replacement maintains the 650V V_DSS and comparable R_DS(on) values to ensure circuit performance consistency.
The device utilizes charge compensation principles and proprietary process technology to minimize on-resistance while maintaining low gate charge.
Yes, the device is avalanche-rated, enhancing its strength and reliability under transient energy conditions.
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