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IXTP2N80P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 800V 2A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTP2N80P
- Description：MOSFET N-CH 800V 2A TO220AB
- Series：PolarHV™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：5.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：440 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：70W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IXTP2N80P
Single FETs, MOSFETs Overview
The IXTP2N80P is a PolarHV N-Channel Enhancement Mode Power MOSFET manufactured by IXYS. It utilizes the HDMOS process for low on-resistance and features a rugged polysilicon gate cell structure. The device is rated for an 800V drain-source voltage and a continuous drain current of 2A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 6.2 Ohms, a threshold voltage range of 2.5V to 5.5V, and a gate charge of 10.6nC. It supports avalanche energy ratings and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- HDMOS process technology for low on-resistance
- Rugged polysilicon gate cell structure
- Avalanche energy rated capability
- Low package inductance for easy driving
Single FETs, MOSFETs Applications
- Switch-mode power supplies
- Resonant-mode power supplies
- Flyback inverters
- DC choppers
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official datasheets. Check for obsolescence notices as availability may vary. Ensure storage conditions prevent moisture damage prior to soldering.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring moderate current handling. Evaluate thermal management requirements based on the 54W power dissipation rating. Consider the 6.2 Ohm on-resistance for conduction loss calculations. Verify gate drive compatibility with the specified threshold voltage range.
Single FETs, MOSFETs Part Context
This part belongs to the IXTP series of high-voltage MOSFETs from IXYS. It shares the PolarHV branding and HDMOS technology with similar models like IXTA2N80P. The TO-263AA (D2PAK) package provides surface-mount convenience while maintaining robust thermal performance for industrial power electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include IXTA2N80P. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference electrical limits to ensure adequate margin for the specific application.
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