IXTP44N10T

Single FETs, MOSFETs Overview

The Littelfuse IXTP44N10T is an N-Channel Enhancement Mode Power MOSFET featuring Trench technology. It offers a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID25) of 44 A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 30 mΩ at VGS = 10 V. It supports a peak pulsed drain current (IDM) of 110 A and dissipates up to 130 W of power. The component operates within a junction temperature range of -55°C to +175°C and is avalanche rated with an energy capability of 250 mJ.

Single FETs, MOSFETs Feature Summary

• Avalanche rated for robust transient handling
• Low RDS(on) for efficient conduction
• High current handling capability
• 175°C operating temperature rating

Single FETs, MOSFETs Applications

• Automotive motor drives
• 24V/48V automotive power bus systems
• Anti-lock braking systems (ABS)
• DC/DC converters and off-line UPS primary-side switching
• High current switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the IXTP suffix denotes the TO-220 through-hole package, while the IXTY suffix corresponds to the TO-252 surface-mount version. Confirm that the sourcing channel provides original manufacturer documentation to ensure authenticity. Check for any specific handling requirements related to electrostatic discharge during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency in 100 V environments. The low on-resistance minimizes conduction losses in high-current paths. Ensure the thermal management solution can handle the specified power dissipation at the expected ambient temperatures. Verify gate drive compatibility with the threshold voltage characteristics for reliable switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS Trench Power MOSFET family, now distributed by Littelfuse. It utilizes advanced trench gate technology to achieve superior performance compared to standard planar devices. The product line is designed for general-purpose power switching applications where size and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

The IXTP44N10T is functionally equivalent to the IXTP44N10T from IXYS. For surface-mount implementations, the IXTY44N10T serves as the direct alternative in the TO-252 package. Cross-referencing should focus on matching the 100 V rating, 44 A current capacity, and 30 mΩ maximum on-resistance specifications.