IXTQ86N25T

Single FETs, MOSFETs Overview

The IXTQ86N25T is an N-Channel Trench Gate Power MOSFET manufactured by Littelfuse Inc. (originally IXYS). It features a drain-source voltage rating of 250 V and a continuous drain current of 86 A at 25°C case temperature. The device has a maximum on-state resistance of 37 mΩ at VGS = 10V. It is avalanche rated with an energy capability of 1.5 J. The component utilizes a TO-3P leaded package, weighing 5.5 g, and supports junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

• Avalanche rated for robust transient handling
• Low package inductance design for easier driving and protection
• High power density suitable for compact mounting

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the IXTQ86N25T designation corresponds to the TO-3P form factor. Confirm that the sourcing channel provides original manufacturer documentation or authorized distribution records. Ensure the component meets the thermal management requirements for the intended application environment. Check for any specific handling precautions related to the plastic body and lead structure during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a high-current, 250 V N-Channel MOSFET is needed for power conversion applications. The low on-resistance minimizes conduction losses, while the avalanche rating adds resilience against inductive load switching. Consider the TO-3P package for its thermal performance and mechanical stability in high-power density designs requiring direct board or heatsink mounting.

Single FETs, MOSFETs Part Context

This part belongs to the IXTH/IXTV/IXTQ series of N-Channel Trench Gate Power MOSFETs from Littelfuse (formerly IXYS). These devices are designed for general-purpose power switching applications. The series offers various package options including TO-247 and PLUS220 to accommodate different thermal and mechanical constraints in industrial and consumer electronics systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other IXYS/Littelfuse parts sharing the 250V/86A/37mΩ specifications, such as the IXTH86N25T (TO-247) or IXTV86N25T (PLUS220), ensuring pinout compatibility and package dimensions match the existing footprint.