IXTU2N80P

Single FETs, MOSFETs Overview

The IXTU2N80P is an N-channel enhancement-mode Power MOSFET from the PolarHV series by IXYS. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 2 A at 25°C. The device has a maximum on-resistance (Rds(on)) of 6 Ω and operates within a junction temperature range of -55°C to +150°C. Packaged in TO-220AB, it dissipates up to 70 W of power under case conditions.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 800 V breakdown rating
• Enhanced ruggedness for harsh environments
• Low gate charge for efficient switching

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Induction heating circuits
• Power factor correction stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling in compact through-hole designs. Evaluate thermal management needs carefully due to the 70 W power dissipation limit and 6 Ω on-resistance, ensuring adequate heatsinking for sustained operation.

Single FETs, MOSFETs Part Context

Part of the PolarHV family designed for high-reliability industrial applications. This series emphasizes robust performance under extreme electrical stress and temperature variations, suitable for demanding power electronics where standard MOSFETs may fail prematurely.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Ensure any substitute maintains similar gate charge characteristics and thermal resistance values to preserve circuit efficiency and reliability without redesigning the layout.