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IXTY02N120P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 1200V 200MA TO252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTY02N120P
- Description：MOSFET N-CH 1200V 200MA TO252
- Series：Polar
- Mfr：Littelfuse Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：75Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IXTY02N120P
Single FETs, MOSFETs Overview
The IXTY02N120P is a single-channel N-channel silicon power MOSFET manufactured by Littelfuse Inc. under the IXYS brand. It features a TO-252 plastic package with three leads. The device supports a continuous drain current of 0.2A and a drain-source breakdown voltage of 1200V. Key electrical parameters include a maximum on-resistance of 0.075 ohms, a gate-source threshold voltage of 6.5V, and a maximum gate-source voltage of 30V. The total gate charge is specified at 193 nC. It operates within a temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability for robust switching in demanding environments
- Low on-resistance for efficient power conduction
- Glass-passivated junctions for long-term reliability and parameter stability
Single FETs, MOSFETs Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Inverter applications requiring high blocking voltage
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation as Littelfuse or IXYS when sourcing. Confirm the specific package type is TO-252 (DPAK) and that the part number suffix matches the exact variant required. Ensure compliance with RoHS directives if applicable to your assembly process. Cross-reference datasheets for thermal resistance values during design validation.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage isolation with low current handling capabilities. The 1200V rating suits high-side switching or bridge configurations in industrial settings. Consider the TO-252 package for surface-mount assembly constraints. Evaluate thermal management requirements based on the 0.075 ohm on-resistance and expected duty cycles.
Single FETs, MOSFETs Part Context
This device belongs to the IXYS power MOSFET portfolio, now integrated into Littelfuse's semiconductor offerings. It represents a specialized niche within the broader transistor category, focusing on high-voltage, low-current performance. The TO-252 package provides a balance between thermal dissipation and board space efficiency compared to through-hole alternatives.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering any alternative components from other manufacturers.
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