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The IXXH100N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT (Extreme Light Punch Through) technology and belongs to the GenX3 series. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 200 A at 25°C, with a pulsed current rating of 440 A. The saturation voltage is typically 1.8 V under test conditions of 15 V gate drive and 70 A collector current. Power dissipation reaches 695 W in a TO-264 package. Operating junction temperature ranges from -55°C to 150°C.
Verify the specific suffix B3 against official IXYS documentation to confirm pinout and thermal interface specifications. Ensure the procurement channel provides valid traceability for RoHS compliance status. Cross-reference the manufacturer part number with distributor listings to confirm availability and lead times before finalizing orders.
Select this component for circuits requiring 600 V blocking capability and high current handling up to 200 A. The TO-264 package suits through-hole mounting on heatsinks. Consider the 1.8 V saturation voltage when calculating thermal management requirements for continuous operation. Verify gate drive compatibility with the specified test conditions.
This IGBT is part of the IXYS IXXH100N60 product family, which shares the XPT and GenX3 technological platform. It serves as a high-current alternative to lower-rated devices like the IXXH50N60B3 while offering higher current density than standard PT technologies. The device is engineered for robust performance in industrial power conversion environments.
Direct replacements include the IXXH100N60C3, which offers similar electrical characteristics but may differ in switching speed classification. Verify package compatibility and thermal resistance values when substituting with other 600V 200A IGBTs from different manufacturers.