IXXH100N60B3

IXXH100N60B3

$11.43
  • Description:IGBT PT 600V 220A TO-247AD
  • Series:GenX3™, XPT™

SKU:1cb28c7bb5eb Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT PT 600V 220A TO-247AD
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):220 A
  • Current - Collector Pulsed (Icm):480 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 70A
  • Power - Max:830 W
  • Switching Energy:1.9mJ (on), 2mJ (off)
  • Input Type:Standard
  • Gate Charge:143 nC
  • Td (on/off) @ 25°C:30ns/120ns
  • Test Condition:360V, 70A, 2Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD (IXXH)
  • Grade:-
  • Qualification:-

Download product information

IXXH100N60B3

Overview

The IXXH100N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT (Extreme Light Punch Through) technology and belongs to the GenX3 series. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 200 A at 25°C, with a pulsed current rating of 440 A. The saturation voltage is typically 1.8 V under test conditions of 15 V gate drive and 70 A collector current. Power dissipation reaches 695 W in a TO-264 package. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

  • Incorporates Extreme Light Punch Through (XPT) technology for optimized conduction and switching performance.
  • Designed for medium-frequency switching applications within the 10 kHz to 30 kHz range.
  • Features low saturation voltage characteristics to minimize conduction losses.

Applications

  • Induction heating systems
  • Uninterruptible power supplies (UPS)
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix B3 against official IXYS documentation to confirm pinout and thermal interface specifications. Ensure the procurement channel provides valid traceability for RoHS compliance status. Cross-reference the manufacturer part number with distributor listings to confirm availability and lead times before finalizing orders.

Selection Notes

Select this component for circuits requiring 600 V blocking capability and high current handling up to 200 A. The TO-264 package suits through-hole mounting on heatsinks. Consider the 1.8 V saturation voltage when calculating thermal management requirements for continuous operation. Verify gate drive compatibility with the specified test conditions.

Part Context

This IGBT is part of the IXYS IXXH100N60 product family, which shares the XPT and GenX3 technological platform. It serves as a high-current alternative to lower-rated devices like the IXXH50N60B3 while offering higher current density than standard PT technologies. The device is engineered for robust performance in industrial power conversion environments.

Replacement Considerations

Direct replacements include the IXXH100N60C3, which offers similar electrical characteristics but may differ in switching speed classification. Verify package compatibility and thermal resistance values when substituting with other 600V 200A IGBTs from different manufacturers.

IXXH100N60B3IXXH100N60B3
$11.43
Buy Now