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The IXYS IXXH100N60C3 is a single N-channel Silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT and GenX3 technologies. It features a TO-247AD-3 package with through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V, a continuous collector current (Ic) of 100 A at 25°C, and a collector-emitter saturation voltage (VCEsat) of 2.3 V. The device supports a power dissipation (Pd) of 600 W, operates within a temperature range of -55°C to +150°C, and has a maximum gate-emitter voltage of ±20 V.
Verify the specific suffix C3 against official datasheets to confirm pinout and thermal characteristics match the design requirements. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity. Check for RoHS compliance status as indicated in the latest documentation before finalizing procurement orders.
Select this component for circuits requiring 600 V blocking capability and 100 A continuous current handling. Ensure the PCB layout accommodates the TO-247AD-3 package dimensions. Verify that the gate driver can supply the required voltage levels within the ±20 V limit. Consider thermal resistance values when designing heatsinking solutions for the intended operating environment.
This IGBT belongs to IXYS' high-performance discrete transistor lineup, leveraging advanced silicon planar technology. It is engineered for efficiency in medium-power conversion systems. The combination of low saturation voltage and fast switching makes it suitable for demanding power electronics applications where energy loss minimization is critical.
Consult official substitution guides for equivalent parts from IXYS or other manufacturers. Verify compatibility regarding pin configuration, voltage ratings, and thermal performance before implementing any alternative components in existing designs.