IXXH100N60C3

IXXH100N60C3

$11.19
  • Description:IGBT PT 600V 190A TO-247AD
  • Series:GenX3™, XPT™

SKU:527cc90e37ed Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 600V 190A TO-247AD
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):190 A
  • Current - Collector Pulsed (Icm):380 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 70A
  • Power - Max:830 W
  • Switching Energy:2mJ (on), 950µJ (off)
  • Input Type:Standard
  • Gate Charge:150 nC
  • Td (on/off) @ 25°C:30ns/90ns
  • Test Condition:360V, 70A, 2Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD (IXXH)
  • Grade:-
  • Qualification:-

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IXXH100N60C3

Overview

The IXYS IXXH100N60C3 is a single N-channel Silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT and GenX3 technologies. It features a TO-247AD-3 package with through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V, a continuous collector current (Ic) of 100 A at 25°C, and a collector-emitter saturation voltage (VCEsat) of 2.3 V. The device supports a power dissipation (Pd) of 600 W, operates within a temperature range of -55°C to +150°C, and has a maximum gate-emitter voltage of ±20 V.

Feature Summary

  • Integrates XPT technology for optimized trade-off between conduction losses and switching performance.
  • Incorporates GenX3 trench gate architecture to enhance switching speed and reduce total gate charge.
  • Designed for robust operation in high-power industrial applications requiring reliable thermal management.

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supplies (UPS)
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix C3 against official datasheets to confirm pinout and thermal characteristics match the design requirements. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity. Check for RoHS compliance status as indicated in the latest documentation before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring 600 V blocking capability and 100 A continuous current handling. Ensure the PCB layout accommodates the TO-247AD-3 package dimensions. Verify that the gate driver can supply the required voltage levels within the ±20 V limit. Consider thermal resistance values when designing heatsinking solutions for the intended operating environment.

Part Context

This IGBT belongs to IXYS' high-performance discrete transistor lineup, leveraging advanced silicon planar technology. It is engineered for efficiency in medium-power conversion systems. The combination of low saturation voltage and fast switching makes it suitable for demanding power electronics applications where energy loss minimization is critical.

Replacement Considerations

Consult official substitution guides for equivalent parts from IXYS or other manufacturers. Verify compatibility regarding pin configuration, voltage ratings, and thermal performance before implementing any alternative components in existing designs.

IXXH100N60C3IXXH100N60C3
$11.19
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