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The IXXH30N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies within a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 115 A at 25°C, with a peak pulsed current capability of 230 A. The saturation voltage is specified at 1.85 V under test conditions of 15 V gate drive and 36 A collector current. Power dissipation reaches 270 W, operating reliably between -55°C and +175°C junction temperature.
Verify the specific suffix designation against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the ordering documentation explicitly references the TO-247AD-3 package variant. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement specifications.
Select this component when a 600V rating and approximately 115A continuous current capacity are required in a standard through-hole form factor. Compare the 1.85V saturation voltage against system efficiency targets. Evaluate the 270W power dissipation limit against available heatsinking solutions to ensure thermal management meets the +175°C maximum junction temperature specification.
This part belongs to the IXYS IXXH series of XPT IGBTs. It shares the same voltage class and packaging family as models like IXXH50N60B3D1 but offers lower current handling capabilities. The series is designed for general-purpose industrial switching applications requiring robust performance in medium-power environments.
The IXXH30N60B3D1 is a documented alternative within the same product line. Verify electrical parameter equivalence and package pinout alignment before substitution. Other series members such as IXXH50N60C3 share similar voltage ratings but differ significantly in current and saturation voltage specifications.