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The IXXH50N60B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 XPT series, housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A at 25°C, with a peak pulsed current rating of 200 A. The device exhibits a typical collector-emitter saturation voltage of 1.8 V under standard test conditions. Maximum power dissipation is rated at 600 W, supporting an operating junction temperature range from -55°C to +175°C. Key switching parameters include a gate charge of 70 nC, turn-on delay of 27 ns, turn-off delay of 100 ns, and reverse recovery time of 25 ns.
Verify component authenticity by cross-referencing the manufacturer part number against official IXYS documentation. Confirm that the specific suffix matches the required electrical characteristics and packaging configuration. Ensure compliance with relevant environmental directives such as RoHS standards before integration into final assemblies.
Select this component when designing circuits requiring a balance of low conduction loss and fast switching speeds at 600V ratings. Evaluate thermal resistance requirements based on the 600W dissipation limit and ensure the gate drive circuitry can handle the specified 70nC charge efficiently to minimize switching losses.
This device belongs to the IXYS IXXH50N60 family of XPT IGBTs. It shares core technological attributes with other members like the IXXP50N60B3 but differs in specific package variants and minor parameter tolerances defined by the manufacturer's GenX3 generation specifications.
Direct substitutes within the same family include the IXXH50N60B3. Verify pinout compatibility and exact electrical limits against datasheets before substitution.