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The IXXH50N60C3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT C3-Class series. It utilizes XPT technology and features a TO-247AD through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 600 V, a continuous collector current of 100 A at 25°C, and a collector-emitter saturation voltage of 2.3 V. The device supports a power dissipation of 600 W, with an operating temperature range spanning from -55°C to +150°C. Additional specifications list a gate-emitter voltage limit of ±20 V, a gate-emitter leakage current of 100 nA, and a unit weight of 6.500 g.
Verify the specific manufacturing date code and lot traceability upon receipt to ensure compliance with project requirements. Confirm that the TO-247AD package integrity remains intact during transit. Cross-reference the datasheet revision against your design documentation to validate all electrical limits and thermal characteristics before final assembly.
Select this component when a 600V rating and 100A continuous current capability are required in a TO-247AD form factor. The 2.3V saturation voltage indicates moderate conduction losses suitable for general-purpose switching applications. Ensure the thermal management system can handle the specified 600W power dissipation limit under worst-case operating conditions.
This part belongs to the IXYS IXXH50N60 series, which groups devices by their 600V voltage class and approximate current handling capabilities. The 'C3' suffix denotes the specific generation or variant within the XPT lineup, distinguishing it from other series like the B3 or standard planar types found in the manufacturer's catalog.
Direct substitutes within the same family include the IXXH50N60B3D1, which offers different saturation voltage and temperature ratings. Other potential replacements may include parts from the IXXH75N60C3 series if higher current capacity is acceptable, provided pin compatibility and thermal constraints are met.