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Product Detailed Parameters
- Description：IGBT PT 600V 160A TO-247AD
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 60A
- Power - Max：750 W
- Switching Energy：1.7mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：107 nC
- Td (on/off) @ 25°C：35ns/118ns
- Test Condition：400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD (IXXH)
- Grade：-
- Qualification：-
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Overview
The IXXH75N60B3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 XPT series, utilizing epi-planar trench technology with Field Stop and Trench Rectifier structures. The device features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 75A at 25°C. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247AD package.
Feature Summary
- Incorporates XPT (Epi-Planar Trench) technology for optimized switching performance and low saturation voltage.
- Features a square Reverse Bias Safe Operating Area (RBSOA) ensuring robust operation under hard switching conditions.
- Designed for high-frequency applications with reduced switching losses compared to standard PT technologies.
Applications
- High-frequency power supplies
- Motor drive inverters
- Uninterruptible Power Supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix D1 against the official datasheet to confirm pinout configuration and internal diode integration. Ensure the ordering part number matches the exact thermal and electrical requirements of the target application circuit before finalizing procurement.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 75A. Consider the TO-247AD package for through-hole mounting and adequate heat dissipation. Evaluate gate charge specifications against driver capabilities to ensure efficient switching transitions.
Part Context
This device is part of the IXYS IXXH75N60 family, specifically the C3 and B3 variants within the GenX3 generation. It serves as a medium-speed IGBT solution designed to balance conduction losses and switching speed for industrial power electronics applications.
Replacement Considerations
Direct substitutes include IXXH75N60C3D1. Cross-brand equivalents should be evaluated based on matching Vces, Ic ratings, and package dimensions to ensure mechanical and electrical compatibility.
