IXXH75N60C3D1

Overview

The IXXH75N60C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT (Extreme Light Punch Through) technology and belongs to the GenX3 product family. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C, with a pulsed current rating of 150 A. It operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.3 V at 60 A, a gate charge of 107 nC, and switching times of 35 ns (turn-on) and 90 ns (turn-off). The component is housed in a TO-247AD through-hole package.

Feature Summary

• Incorporates XPT technology for optimized trade-off between conduction losses and switching performance.
• Designed for high-frequency applications up to 20-60 kHz using GenX3 architecture.
• Features robust short-circuit withstand capability and wide safe operating area.

Applications

• High-frequency power inverters
• Switch-mode power supplies
• Motor control drives

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Check for any recent Product Change Notices that may affect mechanical dimensions or material composition. Ensure the supplier provides original manufacturer documentation to validate authenticity.

Selection Notes

Select this component for designs requiring low switching losses at frequencies above standard hard-switched limits. The 600V rating suits medium-voltage AC/DC conversion systems. Evaluate thermal management requirements based on the 750 W power dissipation limit in the TO-247AD package. Compare gate charge specifications against driver capabilities to optimize switching speed and minimize drive power consumption.

Part Context

This part belongs to the IXYS IXXH series of XPT IGBTs, which are engineered for efficiency in high-power density applications. The GenX3 generation introduces improved trench gate technology compared to previous planar designs. It serves as a discrete solution for single-phase or three-phase bridge configurations where compact size and high reliability are critical.

Replacement Considerations

Direct replacements within the same family include IXXH50N60C3D1 for lower current requirements. Cross-brand equivalents should be evaluated based on matching Vceo, Ic, and package type. Verify that substitute devices meet the same switching energy and thermal resistance specifications to maintain circuit performance integrity.