IXXH80N65B4H1

Overview

The IXXH80N65B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing Trench GenX4 and XPT technologies. It features a TO-247AD-3 package for through-hole mounting. Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 80 A at 25°C, with a pulsed current rating of 160 A. The device exhibits a maximum collector-emitter saturation voltage of 2.1 V and a gate-emitter leakage current of 100 nA. Thermal performance is characterized by a power dissipation capacity of 625 W and an operating junction temperature range from -55°C to +175°C.

Feature Summary

• Integrates IXYS Trench GenX4 technology combined with Field Stop (XPT) structure to optimize switching losses and short-circuit ruggedness.
• Designed for high-efficiency power conversion applications requiring low conduction losses and robust thermal management capabilities.

Applications

• Industrial motor drives and servo systems
• High-frequency welding power supplies
• Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides valid traceability documentation. Confirm RoHS compliance status directly with the supplier or original manufacturer records prior to finalizing acquisition orders.

Selection Notes

Select this component when designing circuits requiring a 650 V blocking voltage with moderate current handling in a standard TO-247 form factor. Evaluate the thermal resistance requirements against the 625 W dissipation limit. Compare the 2.1 V saturation voltage against alternative devices to ensure optimal efficiency in the target application's duty cycle conditions.

Part Context

This part belongs to the IXYS IXXH series of Trench IGBTs featuring XPT technology. It serves as a high-performance discrete switch within the broader portfolio of power semiconductors designed for industrial and consumer electronics. The device represents a balance between conduction efficiency and switching speed suitable for medium-power applications.

Replacement Considerations

Direct substitutes within the same family include IXXH60N65B4H1 and IXXH100N65B4H1, which share identical packaging and electrical interface specifications but differ in current ratings. Verify thermal and electrical margins before implementing any cross-model replacement.