IXXK160N65B4

Overview

The IXXK160N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench and XPT technology to achieve high efficiency in power switching applications. The device features a collector-emitter voltage rating of 650 V and a continuous collector current of 160 A at 25°C. It is housed in a TO-264-3 package designed for through-hole mounting, supporting a maximum power dissipation of 980 W. The component operates within a junction temperature range from -55°C to +175°C, ensuring reliability under demanding thermal conditions.

Feature Summary

• Integrates Trench gate technology with XPT (eXtended Plate Technology) to optimize the trade-off between low saturation voltage and fast switching performance.
• Engineered for high-power density designs with robust short-circuit capability and high avalanche energy tolerance.
• Utilizes a rugged TO-264-3 leaded package structure to facilitate efficient heat transfer and secure mechanical mounting.

Applications

• High-frequency induction heating systems
• Switch-mode power supplies (SMPS)
• Motor drive inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the part number with official replacement lists if legacy support is required for long-term production stability.

Selection Notes

Select this component when designing circuits requiring a balance of low conduction losses and manageable switching speeds at 650 V ratings. Evaluate the thermal resistance characteristics of the TO-264-3 package against the expected power dissipation levels. Confirm that the gate drive circuitry can handle the input capacitance and charge requirements specified in the electrical characteristics table.

Part Context

This part belongs to the IXYS IXX series of high-performance IGBTs. It represents an evolution in silicon power switching devices, combining advanced trench gate architecture with plasma texturing to reduce tail current. The series is widely recognized for its reliability in industrial power conversion environments where high current handling is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official cross-reference guide or contact technical support directly for verified equivalent components.