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The IXXK200N60B3 is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 XPT series. It features a TO-264-3 (TO-220 Fullpak) through-hole package designed for high-power applications. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 600 V and a continuous collector current (Ic) of 200 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (Vce(sat)) of 1.7 V. It supports a maximum power dissipation of 1.63 kW and operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original manufacturer documentation, as third-party listings may contain inaccurate specifications or outdated revision levels for this component.
Select this component when a 600 V rating and 200 A continuous current are required in a TO-264-3 package. Consider the 1.7 V Vce(sat) for conduction loss calculations. Verify that the application's thermal management system can handle the 1.63 kW power dissipation rating under worst-case operating conditions.
This part belongs to the IXYS GenX3 XPT family, which combines trench gate technology with field-stop layer engineering. This combination targets reduced switching losses and improved ruggedness compared to previous planar technologies, making it suitable for medium-to-high frequency power conversion applications.
Direct replacements must match the 600 V / 200 A specification and TO-264-3 footprint. Cross-reference with other manufacturers' equivalent trench IGBTs in the same package, ensuring identical pin configurations and comparable Vce(sat) and switching energy values.