IXXK200N65B4

Overview

The IXXK200N65B4 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX4 XPT series. It utilizes Trench technology to achieve high current density and low conduction losses. The device features a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current (Ic) of 200 A at 25°C, with a pulsed collector current capability of 370 A. The saturation voltage (VCE(sat)) is specified at 1.7 V. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 1.63 kW of power. The component is housed in a TO-264-3 package designed for through-hole mounting.

Feature Summary

• GenerX4 XPT trench technology provides optimized trade-off between conduction and switching losses.
• Square Reverse Bias Safe Operating Area (RBSOA) ensures robust performance under short-circuit conditions.
• High thermal stability supports operation at elevated junction temperatures up to 175°C.

Applications

• Industrial motor drives and inverters
• Uninterruptible Power Supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to prevent counterfeit products. Confirm RoHS compliance status if required by local regulations before finalizing orders.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities above 200 A with a 650 V blocking voltage. The TO-264-3 package necessitates adequate heatsinking infrastructure due to its 1.63 kW power dissipation rating. Evaluate gate drive requirements carefully, as the device requires a maximum gate-emitter voltage of ±20 V for reliable switching operations.

Part Context

This part belongs to the IXYS GenX4 family, representing an evolution in trench IGBT technology. It succeeds earlier generations like GenX3 while offering improved efficiency compared to standard planar devices. The XPT (eXtended Plate Technology) layer reduces tail current during turn-off, enhancing overall system efficiency in hard-switching applications.

Replacement Considerations

Direct replacements must match the 650V/200A specification and TO-264-3 footprint. Verify thermal resistance characteristics and gate charge parameters to ensure equivalent switching performance. Cross-referencing with other GenX4 variants may require checking for subtle differences in saturation voltage or safe operating area limits.