IXXK300N60B3

IXXK300N60B3

$26.51
  • Description:IGBT PT 600V 550A TO-264
  • Series:GenX3™, XPT™

SKU:6fc8b483e75c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT PT 600V 550A TO-264
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):550 A
  • Current - Collector Pulsed (Icm):1140 A
  • Vce(on) (Max) @ Vge, Ic:1.6V @ 15V, 100A
  • Power - Max:2300 W
  • Switching Energy:3.45mJ (on), 2.86mJ (off)
  • Input Type:Standard
  • Gate Charge:460 nC
  • Td (on/off) @ 25°C:50ns/190ns
  • Test Condition:400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264 (IXXK)
  • Grade:-
  • Qualification:-

Download product information

IXXK300N60B3

Overview

The IXXK300N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and belongs to the XPT and GenX3 product series. The device features a TO-247-PLUS-3 through-hole package with a flange mount configuration. Key electrical ratings include a maximum collector-emitter voltage of 600 V, a continuous collector current of 550 A at 25°C, and a peak pulsed collector current of 1.14 kA. The typical collector-emitter saturation voltage is 1.6 V. Power dissipation reaches 2.3 kW, operating within a temperature range of -55°C to +175°C junction temperature.

Feature Summary

  • Incorporates XPT (eXtended Plate Technology) for optimized trade-off between switching losses and conduction voltage.
  • Features GenX3 gate driver architecture integrated into the chip design for improved switching performance and robustness.
  • Designed for high-current applications requiring low on-state voltage drop in medium-frequency switching environments.

Applications

  • High-power industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the exact suffix B3 against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Ensure the ordering part number matches the specific generation of the GenX3 technology. Cross-reference the TO-247-PLUS-3 package dimensions with your PCB footprint or heatsink interface requirements before finalizing procurement.

Selection Notes

Select this component for circuits requiring high current handling up to 550 A with moderate switching speeds. Compare the 1.6 V saturation voltage against system efficiency targets. Ensure the gate drive circuit can supply sufficient current to charge the input capacitance rapidly. Verify that the thermal management solution can dissipate 2.3 kW under worst-case operating conditions.

Part Context

This part belongs to the IXYS IXXK300N60 family of high-power IGBTs. It shares the XPT and GenX3 technological foundation with other devices in the series but is distinguished by its specific current rating and package type. It serves as a core switching element in high-power conversion topologies where reliability and low conduction loss are critical.

Replacement Considerations

Direct replacements must match the 600V/300A+ rating and TO-247-PLUS-3 package. Check datasheets for equivalent Vce(sat) and switching times from manufacturers like Infineon or Mitsubishi. Ensure thermal resistance values are compatible with existing heatsink designs.

IXXK300N60B3IXXK300N60B3
$26.51
Buy Now