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Product Detailed Parameters
- Description：IGBT MOD 650V 210A 750W SOT227B
- Series：XPT™, GenX4™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 110A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：210 A
- Power - Max：750 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：3.69 nF @ 25 V
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Overview
The IXXN110N65C4H1 is a 650V, 110A XPT™ GenX4™ IGBT with an integrated anti-parallel Sonic Diode. It utilizes Extreme Light Punch Through technology for optimized switching in the 20-60kHz range. The device features a miniBLOC (SOT-227B) package with aluminum nitride isolation and a 2500V~ isolation voltage. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.35V at 110A, a typical turn-off fall time of 35ns, and a power dissipation rating of 750W at 25°C case temperature.
Feature Summary
- Integrated anti-parallel Sonic Diode for high-frequency operation
- Aluminum nitride isolation providing 2500V~ dielectric strength
- Square Reverse-Bias Safe Operating Area (RBSOA)
- Short-circuit capability up to 10 microseconds
Applications
- Power Inverters
- Uninterruptible Power Supplies (UPS)
- Motor Drives
- Switching Mode Power Supplies (SMPS)
- Battery Chargers
Procurement Notes
Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the presence of the miniBLOC package and aluminum nitride isolation layer. Ensure the ordering suffix matches the exact part number required for your design. Request relevant test reports or certificates of conformity from authorized suppliers to validate compliance with RoHS standards.
Selection Notes
Select this component for designs requiring high current density and fast switching speeds between 20kHz and 60kHz. The integrated Sonic Diode eliminates the need for external freewheeling diodes, simplifying circuit layout. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the specified operating range during continuous load conditions.
Part Context
This IGBT belongs to IXYS' XPT™ GenX4™ family, designed for high-efficiency power conversion. The miniBLOC packaging allows for robust mounting and efficient heat dissipation compared to standard through-hole packages. The integration of the Sonic Diode distinguishes it from standard IGBTs, making it suitable for resonant and high-frequency hard-switching topologies.
Replacement Considerations
Direct replacements must match the 650V rating, 110A current capacity, and miniBLOC package footprint. Verify that substitute components also feature integrated fast recovery diodes with similar reverse recovery characteristics. Ensure thermal resistance and isolation voltage ratings meet or exceed the original specifications for safe operation.
FAQ
What is the maximum short-circuit withstand time?
The device can withstand a non-repetitive short-circuit condition for up to 10 microseconds at a junction temperature of 150°C.
How does the Sonic Diode improve performance?
The integrated Sonic Diode offers low reverse recovery charge and fast recovery time, optimizing efficiency and reducing switching losses in high-frequency applications.
What is the isolation voltage rating?
The component provides a dielectric isolation voltage of 2500V~ at 50/60Hz for one minute.
