IXXR110N65B4H1

Overview

The IXXR110N65B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench and XPT technologies to achieve high efficiency in power switching applications. The device features a collector-emitter voltage rating of 650 V and a continuous collector current of 110 A at 25°C. It operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.1 V, a gate-emitter voltage range of ±20 V, and a power dissipation capacity of 880 W. The component is housed in a TO-247-3 package designed for through-hole mounting.

Feature Summary

• Integrates IXYS GenX4 Trench technology with XPT (eXtended Plateau) processing for optimized trade-offs between conduction losses and switching performance.
• Features a robust TO-247-3 leaded package construction engineered for high thermal stability and reliable operation under demanding industrial conditions.

Applications

• High-frequency switch-mode power supplies
• Industrial motor drive inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix H1 against official IXYS documentation to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides valid traceability records. Cross-reference the manufacturer part number with the latest datasheet revision to confirm compliance with current environmental standards such as RoHS and REACH requirements before finalizing orders.

Selection Notes

Select this component when designing circuits requiring a balance of moderate current handling and low saturation voltage. The 650V rating suits medium-voltage DC bus applications. Evaluate the thermal resistance specifications relative to the intended heatsinking strategy. Confirm that the gate drive circuitry can support the required voltage levels without exceeding the ±20V absolute maximum ratings during transient events.

Part Context

This device belongs to the IXYS IXXX series of Trench IGBTs, which are engineered for general-purpose power switching. The series leverages advanced silicon planar technology to deliver improved ruggedness compared to older generations. It serves as a core switching element in topologies where efficiency and thermal management are critical design constraints.

Replacement Considerations

Direct replacements must match the 650V/110A specification and TO-247-3 footprint. Verify that alternative candidates possess comparable saturation voltage and switching energy values to maintain system efficiency. Consult manufacturer substitution guides for electrically equivalent devices from the same product family.