IXXX140N65B4H1

Overview

The IXXX140N65B4H1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS Trench GenX4 XPT series. It utilizes XPT technology to achieve low saturation voltage and high short-circuit capability. The device features a TO-247-3 through-hole package with a collector-emitter maximum voltage of 650 V and a continuous collector current of 200 A at 25°C. Peak pulsed collector current reaches 840 A, while the collector-emitter saturation voltage is specified at 1.9 V. Maximum power dissipation is 1.2 kW at case temperature, operating within a junction temperature range of -55°C to +175°C.

Feature Summary

• Incorporates IXYS XPT (Extended Plate Technology) for optimized trade-off between conduction losses and switching performance.
• Features Trench GenX4 gate architecture designed to minimize turn-off tail current and reduce switching energy losses.
• Engineered with robust short-circuit withstand capability suitable for demanding industrial protection schemes.

Applications

• Industrial motor drives and variable frequency drives
• High-frequency welding inverters
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and date code against official Littelfuse/IXYS documentation. Confirm RoHS compliance status via the specific datasheet revision. Ensure ordering suffixes match exact thermal and electrical specifications required for the design.

Selection Notes

Select this component when high current handling and low conduction loss are prioritized over ultra-fast switching speeds. Evaluate thermal management requirements based on the 1.2 kW power dissipation rating in the TO-247-3 package. Verify that the gate drive voltage aligns with the specified -20 V to +20 V range for optimal saturation characteristics.

Part Context

This device belongs to the IXXX series of high-power IGBTs manufactured by IXYS, now part of Littelfuse. The series is characterized by the use of XPT technology and Trench gate structures, targeting applications requiring high efficiency and reliability in medium-to-high power conversion environments.

Replacement Considerations

Direct substitutes include IXXX200N65B4, which shares the same package and XPT technology but offers different current ratings. Other compatible options within the IXYS portfolio may include variants from the IXXH or IXFH series, provided voltage and current specifications meet the circuit requirements.