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The IXXX160N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features Trench GenX4 technology with XPT (Extended Plate Technology) for optimized performance. The device is housed in a PLUS247-3 through-hole package. Key electrical parameters include a collector-emitter breakdown voltage of 650V and a continuous collector current of 160A at 25°C. It supports a maximum power dissipation of 940W and operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix and manufacturer documentation to confirm exact electrical tolerances and thermal resistance values. Ensure the procurement channel provides original manufacturer packaging to prevent counterfeit components. Cross-reference the datasheet revision date with production batches to guarantee compliance with current technical specifications.
Select this component for designs requiring a balance of low on-state voltage and fast switching speeds. The PLUS247-3 package facilitates efficient heat sinking for high-power density circuits. Evaluate thermal impedance requirements against the 940W dissipation limit to ensure adequate cooling solutions are implemented for sustained operation.
This IGBT belongs to IXYS's XPT series, which utilizes charge storage layers to improve short-circuit ruggedness and reduce tail current during turn-off. The Trench GenX4 architecture minimizes gate charge and switching energy compared to previous generations, making it suitable for modern medium-voltage power electronics.
Publicly confirmed substitute part numbers are not available in the provided source material.