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Product Detailed Parameters
- Description：IGBT PT 650V 290A PLUS247
- Series：GenX4™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：290 A
- Current - Collector Pulsed (Icm)：800 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 160A
- Power - Max：940 W
- Switching Energy：3.5mJ (on), 1.3mJ (off)
- Input Type：Standard
- Gate Charge：422 nC
- Td (on/off) @ 25°C：52ns/197ns
- Test Condition：400V, 80A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXXX160N65C4 is a single Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing Trench GENX4 and XPT technologies. It features a 650V collector-emitter voltage rating and a continuous collector current of 160A at 25°C, with a maximum pulsed current of 310A. The device operates in a TO-247-3 package with through-hole mounting. Key electrical parameters include a saturation voltage of 1.8V, power dissipation of 940W, and a junction temperature range from -55°C to +175°C.
Feature Summary
- Incorporates Trench GENX4 technology for optimized switching performance.
- Utilizes XPT (eXtended Plateau Technology) to enhance short-circuit withstand capability.
- Designed for high-efficiency power conversion applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency induction heating
Procurement Notes
Verify the specific suffix 'C4' against official IXYS documentation to confirm exact specifications, as variations exist within the IXXK/IXXX series. Ensure compatibility with standard TO-247-3 thermal management solutions. Confirm RoHS compliance status via the manufacturer's latest datasheet before integration into regulated systems.
Selection Notes
Select this component for applications requiring robust short-circuit protection and low conduction losses. The combination of Trench and XPT technologies offers improved ruggedness compared to standard IGBTs. Evaluate thermal resistance requirements against the 940W dissipation limit and ensure gate drive voltages align with the specified ±20V limits.
Part Context
This part belongs to the IXYS IXX series of high-power IGBTs. It shares the TO-247-3 form factor with other devices in the lineup but differs in internal architecture due to the specific GENX4 and XPT process nodes. It serves as a discrete solution for medium to high-power industrial electronics.
Replacement Considerations
Direct substitutes may include IXXK160N65C4 or similar 650V/160A IGBTs from the same family. Verify pinout compatibility and thermal characteristics when cross-referencing with alternative manufacturers' equivalent parts.
FAQ
What is the typical turn-off time for the IXXX160N65C4?
The typical fall time (t_off) is approximately 30ns, as documented in preliminary technical information for the IXX(K,X)160N65C4 series.
Does the IXXX160N65C4 support short-circuit operation?
Yes, the device utilizes XPT technology specifically designed to provide enhanced short-circuit withstand capability.
