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Product Detailed Parameters
- Description：IGBT PT 600V 510A PLUS247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：510 A
- Current - Collector Pulsed (Icm)：1075 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 100A
- Power - Max：2300 W
- Switching Energy：3.35mJ (on), 1.9mJ (off)
- Input Type：Standard
- Gate Charge：438 nC
- Td (on/off) @ 25°C：50ns/160ns
- Test Condition：400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXXX300N60C3 is a silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT series. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 300 A at 25°C. The device utilizes XPT technology for optimized switching performance. Maximum gate-emitter voltage ratings are -20 V and +20 V. It is housed in a tube package and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- XPT technology implementation for enhanced switching characteristics
- High current handling capability suitable for power conversion applications
- Robust thermal performance with wide operating temperature range
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Welding equipment
Procurement Notes
Verify the specific manufacturer datasheet for detailed electrical characteristics and mechanical drawings before integration. Confirm RoHS compliance status and REACH SVHC declarations directly with the supplier or official documentation. Ensure the component matches the required pinout and thermal resistance specifications for the target application design.
Selection Notes
Select this component for high-power applications requiring 600V blocking capability and substantial current handling. Consider the TO-247AD package constraints for mounting and thermal management. Evaluate the switching energy losses against the system's thermal budget and frequency requirements compared to alternative IGBT technologies.
Part Context
This part belongs to the IXYS XPT series of 600V IGBTs, designed for high-efficiency power switching. The series emphasizes low conduction and switching losses through advanced trench gate and field-stop layer technologies. It serves as a key component in medium to high-power industrial electronics where reliability and thermal stability are critical.
Replacement Considerations
Direct substitutes require matching 600V rating, 300A current capacity, and TO-247AD packaging. Verify equivalent Vce(sat) and switching times to ensure circuit compatibility. Cross-reference with other manufacturers' XPT-class devices if availability is constrained.
