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The IXYA15N65C3D1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, housed in a TO-247-3 package for surface mount or through-hole installation. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C. Key electrical parameters include a saturation voltage of 2.1 V, a power dissipation rating of 180 W, and an operating temperature range from -55°C to +175°C.
Verify the specific suffix D1 against official IXYS documentation to confirm pinout configuration and packaging details. Ensure compatibility with thermal management requirements given the 180 W dissipation rating. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status for the specific production batch.
Select this component when a 650 V rated IGBT with moderate current handling is required. The 15 A continuous current rating suits compact power stages. Consider the thermal resistance values provided in the datasheet for heatsink design. Evaluate the switching energy parameters against the target application frequency to ensure efficiency meets system specifications.
This part belongs to the IXYS IXYA series of XPT IGBTs. It shares the same die technology as higher-current variants like the IXYA50N65C3 but is scaled for lower current applications. The C3 classification indicates specific switching speed and diode recovery characteristics defined by the manufacturer for that generation of devices.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult IXYS technical support or authorized distributor databases for qualified alternatives based on specific electrical and mechanical constraints.