IXYA20N120A4HV

Overview

The IXYA20N120A4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX4 Trench series, designed for low saturation voltage and high power density. The device features a TO-263HV-3 surface-mount package with a maximum collector-emitter voltage of 1.2 kV. At 25°C, it supports a continuous collector current of 76 A and a peak current of 130 A. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 100 nA, and a maximum power dissipation of 375 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

• Incorporates XPT thin-wafer technology to achieve ultra-low collector-emitter saturation voltage.
• Features fourth-generation Trench gate architecture optimized for low conduction losses.
• Supports switching frequencies up to 5 kHz while maintaining high power density.

Applications

• Power inverters
• Motor drive circuits
• Active PFC applications
• Battery chargers
• Welding machines

Procurement Notes

Verify the specific ordering suffix against official IXYS documentation to confirm the exact packaging configuration. The standard tube variant differs from reel-packaged versions such as the -TRL suffix. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Ensure the supplier provides valid traceability documents matching the component markings.

Selection Notes

Select this component when a surface-mount IGBT with high thermal performance is required. The TO-263HV-3 package suits designs needing robust isolation and efficient PCB mounting. Compare the 2.1 V saturation voltage against alternative devices to ensure optimal efficiency in high-current switching applications. Verify that the 1.2 kV rating aligns with the system's DC bus voltage requirements.

Part Context

This part belongs to the IXYS IXYxN120A4 family of XPT GenX4 IGBTs. These transistors are engineered for 1200V applications using silicon technology. The family includes various packages like TO-247 and TO-269HV, offering currents ranging from 55 A to 85 A. The IXYA20N120A4HV specifically addresses the need for compact, high-efficiency switching in industrial power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official IXYS replacement guides or equivalent technical specifications from other manufacturers.