IXYA20N120B4HV

Overview

The IXYA20N120B4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX4 Trench IGBT series, rated for a collector-emitter voltage of 1.2 kV. The device supports a continuous collector current of 76 A at 25°C with a maximum pulsed current of 130 A. It features a low saturation voltage of 2.1 V and operates within a temperature range of -55°C to +175°C. Packaged in a TO-263HV-3 surface-mount format, it dissipates up to 375 W of power.

Feature Summary

• Incorporates XPT thin-wafer technology to optimize conduction losses and support switching frequencies up to 5 kHz.
• Features GenX4 Trench IGBT architecture designed for high power density and low gate drive requirements.
• Provides a wide operating temperature range from -55°C to +175°C suitable for demanding industrial environments.

Applications

• Power inverters
• Motor drives
• PFC circuits
• Battery chargers
• Welding machines

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official documentation. Ensure storage conditions adhere to semiconductor handling standards to prevent moisture damage prior to soldering. Validate package integrity against the specified TO-263HV-3 dimensions.

Selection Notes

Select this component for applications requiring high voltage blocking capability combined with efficient conduction characteristics. The TO-263HV-3 package facilitates surface-mount assembly while maintaining high thermal performance. Consider the 1.2 kV rating and 76 A continuous current limits when designing circuit protection and heat dissipation systems for optimal reliability.

Part Context

This part belongs to the IXYS IXYxN120A4 family of XPT GenX4 IGBTs. These devices are engineered for high-efficiency power switching using advanced trench gate and field-stop technologies. The family offers various current ratings and packages to accommodate diverse power electronics designs requiring robust performance at 1200V.

Replacement Considerations

Direct substitutes include other IXYS GenX4 IGBTs in the same voltage class such as IXYA30N120A4HV. Verify pinout compatibility and thermal resistance specifications before substituting. Cross-reference datasheets to ensure equivalent saturation voltage and switching speed characteristics match the original design requirements.