IXYA20N120C4HV

$7.81

Description：IGBT PT 1200V 68A TO-263HV
Series：GenX4™, XPT™

SKU:1b75d8ad88b3 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 68A TO-263HV
Series：GenX4™, XPT™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：68 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：375 W
Switching Energy：4.4mJ (on), 1mJ (off)
Input Type：Standard
Gate Charge：44 nC
Td (on/off) @ 25°C：14ns/160ns
Test Condition：960mV, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：53 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263HV
Grade：-
Qualification：-

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IXYA20N120C4HV

Overview

The IXYS IXYA20N120C4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing XPT thin-wafer technology and fourth-generation Trench design. It features a TO-263HV-3 surface-mount package with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 76 A at 25°C. The device exhibits a saturation voltage of 2.1 V, power dissipation of 375 W, and operates within a temperature range of -55°C to +175°C.

Feature Summary

Integrates proprietary XPT thin-wafer technology for optimized trade-off between conduction and switching losses.
Employs advanced fourth-generation Trench gate architecture to achieve low on-state voltage drop.
Designed for robust performance in high-voltage applications requiring fast switching speeds.

Applications

High-frequency motor drives
Induction heating systems
Uninterruptible power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified partners. Confirm datasheet revisions match the manufacturing date code. Ensure storage conditions comply with moisture sensitivity levels specified in the official documentation to prevent package degradation prior to soldering.

Selection Notes

Select this component when a surface-mount IGBT with high blocking voltage and moderate current capacity is required. The TO-263HV-3 package suits automated assembly processes. Evaluate thermal management requirements against the 375 W dissipation rating and ensure gate drive voltages remain within the specified ±20 V limits.

Part Context

This part belongs to the IXYS GenX4™ family of high-voltage IGBTs. It complements other models like the IXYA30N120A4HV by offering a specific current-to-package ratio optimized for compact designs. The series emphasizes reliability in demanding power electronics environments.

Replacement Considerations

Direct substitutes include the IXYA20N120B4HV from the same manufacturer. Verify pinout compatibility and electrical parameters before swapping. Cross-reference with generic equivalents only if datasheet specifications align precisely with system requirements.