ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 650V 50A TO-263AA
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：430µJ (on), 650µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：19ns/80ns
- Test Condition：400V, 20A, 20Ohm, 15V
- Reverse Recovery Time (trr)：34 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
Download product information
Overview
The IXYA20N65C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the XPT-GenX3 architecture for optimized switching performance. The device is housed in a D2PAK-3 (TO-263-3) surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 650 V and a continuous collector current of 38 A at 25°C. The saturation voltage is specified at 1.96 V, with a maximum power dissipation of 200 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates XPT-GenX3 technology to balance low conduction losses with fast switching characteristics.
- Designed for high-efficiency power conversion applications requiring robust thermal performance.
- Single configuration suitable for bridge and half-bridge circuit topologies.
Applications
- High-frequency motor drives
- Switched-mode power supplies (SMPS)
- Industrial inverters
Procurement Notes
Verify the specific suffix 'D1' against official IXYS documentation to confirm pinout or marking variations. Ensure the ordering part number matches the required package style and tape/reel specifications if applicable. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a 650V rating and approximately 40A continuous current capability are required in a surface-mount form factor. Compare the 1.96V saturation voltage against alternative packages to evaluate thermal management needs. Confirm that the gate drive requirements align with the standard ±20V limits provided in the electrical characteristics.
Part Context
This device belongs to the IXYS IXYA series of XPT-GenX3 IGBTs. It shares the core semiconductor technology with other variants like the IXYA20N65C3 but differs in packaging or specific manufacturing lot identifiers. The series targets industrial and consumer power electronics markets.
Replacement Considerations
Direct substitutes may include the IXYA20N65C3 if the package and electrical parameters are identical. Verify compatibility with the IXYA15N65C3D1 or IXYA50N65C3 only if current handling adjustments are acceptable. Always validate pinout and thermal resistance values before substitution.
