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The IXYA50N65C3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, housed in a D2PAK-2 (TO-263-2) surface-mount package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 130 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 600 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the specific TRL suffix indicates the tape-and-reel packaging format required for automated assembly processes. Ensure compliance with RoHS and REACH regulations relevant to the target market. Request original manufacturer datasheets to validate technical specifications before procurement.
Select this component when a 650V rated IGBT with 130A continuous current capability is required in a surface-mount form factor. The TO-263-2 package suits designs needing moderate thermal management without through-hole mounting. Verify that the 2.1V saturation voltage aligns with system efficiency targets. Consider thermal resistance characteristics for heatsink design under expected load conditions.
This part belongs to the IXYS IXYA50N65 series, which features XPT technology for improved trade-offs between conduction and switching losses. The C3 designation denotes a specific generation of fast recovery diode integration and switching characteristics. The -TRL suffix specifically identifies the reel-based packaging variant, distinct from tube-packaged equivalents like the IXYA50N65C3.
Direct pin-compatible replacements within the same IXYS family include the IXYA50N65C3 (tube version). Cross-brand substitutions require matching 650V/130A ratings and TO-263-2 packages. Verify switching times and saturation voltages to ensure circuit stability.