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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 110A TO-263
- Series：XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：110 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 36A
- Power - Max：650 W
- Switching Energy：360µJ (on), 260µJ (off)
- Input Type：Standard
- Gate Charge：117 nC
- Td (on/off) @ 25°C：25ns/170ns
- Test Condition：300V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The IXYA50N65C5 is a single N-channel Silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing XPT™ Gen5 technology and a Trench process. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC110) of 50 A at 110°C case temperature. The device operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage (VCE(sat)) of 1.67 V at IC = 36 A and VGE = 15 V, and a turn-off fall time (tfi) of 28 ns. Thermal resistance from junction to case (Rth,JC) is typically 0.38 °C/W.
Feature Summary
- Optimized for high-frequency switching applications between 20 kHz and 60 kHz
- Utilizes proprietary XPT thin-wafer technology for reduced thermal resistance and low energy losses
- Features fast switching characteristics with extremely low tail current
- Provides high surge current capability and a square Reverse Biased Safe Operating Area (RBSOA)
Applications
- Power Inverters
- Uninterruptible Power Supplies (UPS)
- Motor Drives
- Switching Mode Power Supplies (SMPS)
- Welding Machines
Procurement Notes
Verify the component manufacturer designation on the datasheet header, which identifies Littelfuse, Inc., despite the IXYS brand association in the model number. Confirm that the TO-263AB package outline matches the required PCB footprint dimensions. Ensure the specific revision date of the datasheet aligns with the production batch requirements for your design.
Selection Notes
Select this component when designing circuits requiring operation in the 20–60 kHz frequency range. The low tail current and fast switching times make it suitable for efficient power conversion. Verify that the thermal management system can maintain the junction temperature below 175°C under peak load conditions, considering the specified Rth,JC value.
Part Context
This device belongs to the IXYS XPT™ Gen5 IGBT family, designed for medium-power applications. It represents an evolution in trench-gate technology aimed at improving efficiency and reducing switching losses compared to older planar designs. The TO-263AB package provides a standardized international form factor for surface-mount assembly.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, ensure the replacement part maintains compatibility with the 650 V rating, 50 A continuous current requirement, and TO-263AB package dimensions.
