IXYA55N65B5

Overview

The IXYA55N65B5 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing XPT™ thin-wafer technology and a Trench process. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC110) of 55 A at 110°C case temperature. The device exhibits a maximum collector-emitter saturation voltage (VCE(sat)) of 1.50 V at IC = 100 A and VGE = 15 V. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-263-2L package with a thermal resistance from junction to case (RthJC) of 0.38 °C/W.

Feature Summary

• Optimized for switching frequencies between 5 kHz and 30 kHz
• High surge current capability with square Reverse Biased Safe Operating Area (RBSOA)
• Low gate drive requirement and extremely rugged design
• Reduced thermal resistance and optimization for low conduction losses

Applications

• Power Inverters
• Uninterruptible Power Supplies (UPS)
• Motor Drives
• Switching Mode Power Supplies (SMPS)
• Battery Chargers

Procurement Notes

Verify the specific manufacturer designation, as Littelfuse acquired IXYS power semiconductor assets. Confirm the datasheet revision date (XZ 01/22/2024) and ensure the component matches the TO-263-2L outline drawing dimensions. Check for RoHS compliance status and lead-free solderability requirements before integration into production assemblies.

Selection Notes

Select this component for applications requiring high power density and efficient switching in the 5–30 kHz range. Ensure the thermal management system can maintain the junction temperature below 175°C given the 0.38 °C/W thermal resistance. Verify that the gate drive circuitry supports the specified ±20 V continuous and ±30 V transient gate-emitter voltage limits.

Part Context

This device belongs to the Gen5 XPT™ IGBT family, designed for medium-power switching applications. It represents an evolution in trench gate technology aimed at reducing both conduction and switching losses compared to previous generations.

Replacement Considerations

Direct replacements must match the 650 V rating, TO-263-2L package, and similar VCE(sat) and RthJC specifications. Cross-reference with other IXYS/Littelfuse Gen5 XPT models or equivalent industry-standard IGBTs ensuring identical pinout and thermal characteristics.

FAQ

What is the maximum pulsed collector current?

The maximum pulsed collector current (ICM) is 250 A for a duration of 1 ms at TC = 25°C.

What is the typical turn-off fall time?

The typical turn-off fall time (tfi) is 84 ns at Tvj = 25°C under standard test conditions.

Is the device suitable for high-temperature operation?

Yes, the device supports a maximum junction temperature (TJM) of 175°C and a storage temperature range of -55°C to 175°C.