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Product Detailed Parameters
- Description：IGBT PT 650V 290A TO-247
- Series：XPT™, GenX5™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：290 A
- Current - Collector Pulsed (Icm)：790 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 75A
- Power - Max：830 W
- Switching Energy：1.25mJ (on), 3.2mJ (off)
- Input Type：Standard
- Gate Charge：314 nC
- Td (on/off) @ 25°C：45ns/370ns
- Test Condition：400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH120N65A5 is a single N-channel silicon IGBT from the XPT Gen5 series, designed for low-frequency high-current switching applications. It features a TO-247 (IXYH) package with a collector-emitter voltage of 650 V and a continuous collector current of 120 A at 110°C case temperature. The device exhibits a maximum saturated collector-emitter voltage of 1.35 V at 75 A and 15 V gate drive. Key electrical parameters include a total gate charge of 314 nC, turn-on energy of 1.25 mJ, and turn-off energy of 3.20 mJ under standard test conditions.
Feature Summary
- Optimized for low frequency high current switching
- High surge current capability
- Square RBSOA
- International Standard Package
Applications
- Power Inverters
- UPS
- Motor Drives
- SMPS
- PFC Circuits
- Battery Chargers
- Welding Machines
- Lamp Ballasts
Procurement Notes
Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your production timeline. Ensure proper handling procedures are followed due to the sensitivity of semiconductor junctions during installation.
Selection Notes
Select this component when designing circuits requiring robust performance in power inversion or motor drive environments. Evaluate thermal management requirements based on the specified junction temperature range and power dissipation limits. Consider the gate drive voltage specifications to ensure optimal switching characteristics and minimize losses.
Part Context
This part belongs to the IXYS XPT Gen5 family of Extreme Light Punch Through IGBTs. These devices utilize advanced trench technology to achieve high power density and low gate drive requirements. The series is engineered for efficiency in medium-power industrial applications up to 10 kHz switching frequencies.
Replacement Considerations
Direct substitutes within the same package and electrical ratings should be prioritized. Verify pinout compatibility and thermal resistance values before implementation. Cross-reference datasheets for any differences in switching times or safe operating area boundaries.
