IXYH16N170CV1

Overview

The IXYS IXYH16N170CV1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current (Ic) of 16 A at 25°C. The device utilizes the PLUS247 through-hole package, which supports a maximum power dissipation (Pd) of 937 W with adequate heatsinking. Key electrical parameters include a maximum collector-emitter saturation voltage (VceSAT) of 4 V at rated conditions and a gate-emitter voltage limit (VGEO) of ±20 V. The component operates within a junction temperature range of -55°C to +175°C and exhibits a typical switching speed of 95 ns, balancing conduction losses with switching performance in hard-switching topologies.

Feature Summary

• High voltage blocking capability up to 1700 V for robust operation in demanding power circuits
• Low saturation voltage characteristic to minimize conduction losses during on-state
• PLUS247 through-hole package design facilitating efficient thermal management and mechanical mounting

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supply (UPS) systems
• High-frequency welding inverters

Procurement Notes

Verify the specific suffix CV1 against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure the supplier provides original packaging with traceability documentation. Cross-reference the part number with official IXYS distributors to avoid counterfeit components. Confirm RoHS compliance status if required by your manufacturing standards. Validate that the procurement channel is authorized to guarantee product authenticity and warranty support.

Selection Notes

Select this component when designing circuits requiring 1700 V isolation with moderate current handling around 16 A. The PLUS247 package is suitable for applications where through-hole mounting is preferred for mechanical stability or existing PCB footprints. Consider the 95 ns switching speed for medium-frequency operations; faster devices may be needed for higher frequencies despite increased switching losses. Evaluate thermal resistance requirements based on the 937 W dissipation rating and expected ambient temperatures.

Part Context

This IGBT belongs to IXYS's high-voltage discrete transistor lineup, often utilized in industrial power electronics. The numbering convention typically indicates voltage class (1700 V) and current rating (16 A). Similar parts in the series may vary in switching speed or saturation voltage depending on the specific generation technology used by the manufacturer.

Replacement Considerations

Direct replacements must match the 1700 V / 16 A specification and PLUS247 package. Verify equivalent VceSAT and switching times from competitors like Infineon or Mitsubishi. Ensure gate drive voltage compatibility remains within ±20 V limits.