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Product Detailed Parameters
- Description：IGBT 1200V 40A TO-247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
- Power - Max：278 W
- Switching Energy：1.3mJ (on), 500µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：20ns/90ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH20N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 20 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a maximum power dissipation of 680 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Single configuration for discrete switching applications
- Through-hole mounting for robust mechanical connection
- High thermal stability with extended operating temperature range
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the TO-247-3 pinout matches the target PCB footprint. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a 1200 V rating and 20 A continuous current capability are required in a standard through-hole package. Compare the 2.5 V saturation voltage against alternative devices to ensure optimal conduction losses for the specific load profile and switching frequency requirements.
Part Context
This part belongs to the IXYS IGBT portfolio, designed for medium-power switching applications. It shares the TO-247-3 form factor common across many high-voltage discrete semiconductors, facilitating compatibility with existing heatsink and board layouts used in industrial power electronics.
Replacement Considerations
Direct substitutes must match the 1200 V / 20 A specification and TO-247-3 package. Verify equivalent Vce(sat) and thermal resistance values. Cross-reference with other manufacturers' 1200 V IGBTs in the same package family if availability is constrained.
